v3 MASW-004100-1193 hmic? sp4t silicon pin diode switch advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 1 features ? ultra broad bandwidth: 50mhz to 26ghz ? 0.9 insertion loss , 34db isolation at 20ghz ? 50ns switching speed ? reliable, fully monolithic, glass encapsulated construction ? +33dbm power handling ? rohs compliant description the MASW-004100-1193 is a sp4t, series-shunt, broad band, pin diode, switch made with m/a-com tech?s unique hmic tm (heterolithic microwave integrated circuit) process, us patent 5,268,310. this process allows for t he incorporation of silicon pedestals that form the series and shunt diodes or vias by imbedding them in a low loss, low dispersion glass. this hybrid combin ation of silicon and glass gives hmic switches ex ceptional low loss and remarkable high isolation through low millimeter- wave frequencies. applications this high performance switch is suitable for use in multi-band ecm, radar, and instrumentation control circuits where high isolati on to insertion loss ratios are required. with a standard +5v/-5v, ttl controlled pin diode driver, 50ns switching speeds are achieved. absolute maximum ratings t amb = +25c ( unless otherwise specified ) notes: exceeding these limits may cause permanent damage. parameter value operating temperature -65c to +125c storage temperature -65c to +150c rf c.w. incident power ( 20ma) +33dbm bias current ( forward ) 20ma applied voltage ( reverse ) -25 volts j1 j2 j3 j4 j5 maximum operating conditions for the combination of rf power, d.c. bias, and temperature: +33dbm, @ 15ma/diode @ +85c
v3 MASW-004100-1193 hmic? sp4t silicon pin diode switch advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 2 electrical specifications t amb = +25 o c, 20ma bias current (on-wafer measurements) control level ( dc current ) at port condition of rf output condition of rf output condition of rf output condition of rf output j2 j3 j4 j5 j1-j2 j1-j3 j1-j4 j1-j5 -20ma +20ma +20ma +20ma low loss isolation isolation isolation +20ma -20ma +20ma +20ma isolation low loss isolation isolation +20ma +20ma -20ma +20ma isolation isolation low loss isolation +20ma +20ma +20ma -20ma isol ation isolation isolation low loss typical driver connections parameter frequency minimum nominal maximum units insertion loss 20 ghz 0.9 1.3 db isolation 20 ghz 28 34 db input return loss 20 ghz 15 db output return loss 20 ghz 15 db switching speed 1 10 ghz 50 ns notes: typical switching speed is measured from 10% to 90% of dete cted rf voltage driven by a ttl compatible driver. driver output parallel rc network uses a capacitor bet ween 390pf ? 560pf and a resistor between 150 ? ? 220 ? to achieve 50ns rise and fall times.
v3 MASW-004100-1193 hmic? sp4t silicon pin diode switch advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 3 2 ? 18 ghz bias network schematic j1 hmic switch die 100 ? 39 pf 22nh 22 pf 39 pf dc bias 22nh 22 pf j2 j3 j4 j5 fig. 1 operation of the MASW-004100-1193 switch the simultaneous application of negative dc current to the low loss port and positive dc current to the remaining isolated ports as show n in figure 1 will operate the masw -004100-1193 pin diode switch. the backside metalized area of the die is the rf and dc re turn ground plane. the dc return is achieved on common port j1. a current source should be used to supply the dc control currents. the voltages at these points will not exceed 1.5 volts and are typically 1.2 volts for supply currents up to 20 ma. for the port in low loss state, the series diode must be forward biased and the shunt diode reverse biased. for all the isolated ports, the shunt diode is forward biased and the series diode is reverse biased. a typical bias network design which should provide >30 db rf to dc isolation is shown in figure 1. best insertion loss, p1db, ip3, and switching speed are achieved by using a voltage pull-up resistor in the dc return path, j1 (not shown). a minimum value of |-2v| is recommended at this return node and can be obtained using a standard, 65v, ttl controlled, pin diode driver.
v3 MASW-004100-1193 hmic? sp4t silicon pin diode switch advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 4 typical microwave performance MASW-004100-1193 insertion loss -2.0 -1.5 -1.0 -0.5 0.0 0.0 5.0 10.0 15.0 20.0 25.0 30.0 frequency (ghz) loss (db) j1-j2 j1-j3 j1-j4 j1-j5 MASW-004100-1193 input ret urn loss -60 -50 -40 -30 -20 -10 0 0 5 10 15 20 25 30 frequency (ghz) r. loss (db) j1-j2 j1-j3 j1-j4 j1-j5
v3 MASW-004100-1193 hmic? sp4t silicon pin diode switch advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 5 typical microwave performance MASW-004100-1193 output ret urn loss -35 -30 -25 -20 -15 -10 -5 0 0 5 10 15 20 25 30 frequency (ghz) r. loss(db) j2 j3 j4 j5 MASW-004100-1193 isolation -90 -80 -70 -60 -50 -40 -30 -20 -10 0 0 5 10 15 20 25 30 frequency (ghz) isolation (db) j1-j2 j1-j3 j1-j4 j1-j5
v3 MASW-004100-1193 hmic? sp4t silicon pin diode switch advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 6 assembly instructions cleanliness the chip should be handled in a clean environment free of organic contamination. electro-static sensitivity the MASW-004100-1193 pin switch is esd, class 1a se nsitive (hbm). the proper esd handling procedures must be used. wire bonding thermosonic wedge bonding using 0.003? x 0.00025? ribb on or 0.001? diameter gold wire is recommended. a stage temperature of 150c and a force of 18 to 22 grams should be used. ultrasonic energy, if necessary, should be adjusted to the minimum power required to achieve a good bond. rf wire and ribbon lengths should be kept as short as possible to minimize parasitic inductance. mounting these chips have ti-pt-au back metal and can be mounted using 80au/20sn eutectic solder or electrically conductive ag epoxy. mounting surface must be flat and clean of oils and contaminants. eutectic die attachment an 80/20 gold-tin eutectic solder preform is recommended wi th a work surface temperature of 255c and a tool tip temperature of 265c. when hot gas is applied, the tool tip temperature should be 290c. the chip should not be exposed to temperatures greater than 320c for more than 10 seconds. no more than 3 seconds should be required for the die attachment. silver epoxy die attachment a controlled thickness of no more than 2 mils is recomme nded for the best electrical and thermal conductivity. a thin epoxy fillet should be visible around the perimeter of the chip after placement to ensure complete coverage. cure epoxy per manufacturer?s recommended schedule. typically +150c for 1 hour.
v3 MASW-004100-1193 hmic? sp4t silicon pin diode switch advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 7 MASW-004100-1193 chip dimensions dim inches mm nominal nominal a .066 1.67 b .047 1.19 c .054 1.37 d .012 0.31 e .043 1.08 f .009 0.22 g .004 0.11 h .004 0.11 i .033 0.84 j .061 1.56 thickness .005 .120 bond pads .005x.005 0.120x.0120 ordering information part number package MASW-004100-11930w waffle pack MASW-004100-11930g gel pack notes: 1. topside and backside metallization is gold , 2.5mm thick typical. 2. yellow areas indicate wire bonding pads
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